Silicon ingots and plates

We are the Polish company Tara, we offer silicon ingots and plates from Ukraine

Silicon ingots

 semiconductor grade silicon ingots with diameter from 2” up to 8” in quantity more than 200 000kg per year.

Basic parameters of silicon ingots for semiconductor application:
Growth metod CZ
Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped
Diameter from 2″ – to 8″
Orientation

(100) or (111) or (110)

Resistivity

0,001 – 140 Ohm*cm

Oxygen content

<10*1017 at/cm3 (<20ppma) – standard
(7-9)*1017 at/cm3 (14-18 ppma) – special

Carbon content

<10*1016 at/cm3 (<2ppma) – standard
<5*1016 at/cm3 (<1ppma) – special

Dislocation density

<10cm-2

Silicon plates

 semiconductor grade silicon plates with diameter from 2” up to 6” in quantity up to 500 000pcs per year.

Also we have possibility to produce polished wafers with square and pseudosquare shape in accordance to customer’s specification.

Our basic plates parameters meet SEMI M1-00 standard.

Basic parameters of semiconductor grade silicon plates
Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped
Diameter 2″, 3″, 4″, 5″, 6″
Diameter tolerance minimum ±0,3 mm standard ±0,5 mm
Orientation )
Resistivity 0,001 – 140 Ohm*cm
Total thickness variation
 
for diameter 2″

for diameter 3″

for diameter 4″

for diameter 5″

for diameter 6″

Minimum:

5 microns

5 microns

5 microns

8 microns

15 microns

Standard:

10 microns

10 microns

15 microns

15 microns

20 microns

Bow

for diameter 2″

for diameter 3″

for diameter 4″

for diameter 5″

for diameter 6″

Minimum:

20 microns

25 microns

30 microns

35 microns

50 microns

Standard:

25 microns

30 microns

35 microns

40 microns

60 microns

Surface As-cut, lapped, etched, one side and double side polished
Oxygen content <10*1017 at/cm3 (<20ppma) – standard
(7-9)*1017 at/cm3 (14-18 ppma) – special
Carbon content <10*1016 at/cm3 (<2ppma) – standard
<5*1016 at/cm3 (<1ppma) – special
Sincerely,
- 
LTD."TARA"